以阻抗特性量測來分析半導體發光元件之微分載子生命期

Abstract

本論文致力於建立一阻抗分析技術，藉此得知發光元件的微分載子生命期，進而推得主動層中的Shockley–Read–Hall（SRH）復合係數、輻射復合係數以及歐傑復合係數。我們研究三種不同波段的雷射二極體，分別為：成長在磷化銦（InP）基板上，發光波長為1.5 μm的量子井雷射；成長在砷化鎵（GaAs）基板上，發光波長為1.3 μm的啁啾式堆疊量子點雷射；以及成長在藍寶石（sapphire）基板上，發光波長為430 nm的量子井雷射。我們先量測這三種樣品在不同偏壓電流下的元件阻抗，頻率範圍介於1 MHz ~ 500 MHz，接著以適當的電路模型，經擬合分析後萃取出樣品主動層的各種復合係數，實驗結果與文獻上的數值都相當接近。本研究建立了可靠的阻抗分析技術，未來將可應用在新材料或新型結構的發光元件。

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At firs substrate, the other is 430 nm quantum well lasers grown on sapphire substrate. At firs substrate, the other is 430 nm quantum well lasers grown on sapphire substrate. At firs substrate, the other is 430 nm quantum well lasers grown on sapphire substrate. At firs substrate, the other is 430 nm quantum well lasers grown on sapphire substrate. At firs substrate, the other is 430 nm quantum well lasers grown on sapphire substrate. At firs substrate, the other is 430 nm quantum well lasers grown on sapphire substrate. At firs substrate, the other is 430 nm quantum well lasers grown on sapphire substrate. At firs substrate, the other is 430 nm quantum well lasers grown on sapphire substrate. At firssubstrate, the other is 430 nm quantum well lasers grown on sapphire substrate. At firs substrate, the other is 430 nm quantum well lasers grown on sapphire substrate. At firs substrate, the other is 430 nm quantum well lasers grown on sapphire substrate. At firs substrate, the other is 430 nm quantum well lasers grown on sapphire substrate. At firs substrate, the other is 430 nm quantum well lasers grown on sapphire substrate. At firs substrate, the other is 430 nm quantum well lasers grown on sapphire substrate. At firs substrate, the other is 430 nm quantum well lasers grown on sapphire substrate. At firs substrate, the other is 430 nm quantum well lasers grown on sapphire substrate. At firs t, the t, the t, the device impedance is measured under different bias current below threshold for frequency device impedance is measured under different bias current below threshold for frequency device impedance is measured under different bias current below threshold for frequency device impedance is measured under different bias current below threshold for frequency device impedance is measured under different bias current below threshold for frequency device impedance is measured under different bias current below threshold for frequency device impedance is measured under different bias current below threshold for frequency device impedance is measured under different bias current below threshold for frequency device impedance is measured under different bias current below threshold for frequency device impedance is measured under different bias current below threshold for frequency device impedance is measured under different bias current below threshold for frequency device impedance is measured under different bias current below threshold for frequency device impedance is measured under different bias current below threshold for frequency device impedance is measured under different bias current below threshold for frequency device impedance is measured under different bias current below threshold for frequency device impedance is measured under different bias current below threshold for frequency device impedance is measured under different bias current below threshold for frequency device impedance is measured under different bias current below threshold for frequency device impedance is measured under different bias current below threshold for frequency device impedance is measured under different bias current below threshold for frequency device impedance is measured under different bias current below threshold for frequency device impedance is measured under different bias current below threshold for frequency device impedance is measured under different bias current below threshold for frequency device impedance is measured under different bias current below threshold for frequency device impedance is measured under different bias current below threshold for frequency device impedance is measured under different bias current below threshold for frequency device impedance is measured under different bias current below threshold for frequency device impedance is measured under different bias current below threshold for frequency device impedance is measured under different bias current below threshold for frequency device impedance is measured under different bias current below threshold for frequency device impedance is measured under different bias current below threshold for frequency device impedance is measured under different bias current below threshold for frequency device impedance is measured under different bias current below threshold for frequency device impedance is measured under different bias current below threshold for frequency device impedance is measured under different bias current below threshold for frequency device impedance is measured under different bias current below threshold for frequency device impedance is measured under different bias current below threshold for frequency device impedance is measured under different bias current below threshold for frequency range between 1 MHz to 500 MHz. Then, the differential carrier lifetime are extracted by range between 1 MHz to 500 MHz. Then, the differential carrier lifetime are extracted by range between 1 MHz to 500 MHz. Then, the differential carrier lifetime are extracted by range between 1 MHz to 500 MHz. Then, the differential carrier lifetime are extracted by range between 1 MHz to 500 MHz. Then, the differential carrier lifetime are extracted by range between 1 MHz to 500 MHz. Then, the differential carrier lifetime are extracted by range between 1 MHz to 500 MHz. Then, the differential carrier lifetime are extracted by range between 1 MHz to 500 MHz. Then, the differential carrier lifetime are extracted by range between 1 MHz to 500 MHz. Then, the differential carrier lifetime are extracted by range between 1 MHz to 500 MHz. Then, the differential carrier lifetime are extracted by range between 1 MHz to 500 MHz. Then, the differential carrier lifetime are extracted by range between 1 MHz to 500 MHz. 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The The derived recombination coefficients are close to the published results. As a result, derived recombination coefficients are close to the published results. As a result, derived recombination coefficients are close to the published results. As a result, derived recombination coefficients are close to the published results. As a result, derived recombination coefficients are close to the published results. As a result, derived recombination coefficients are close to the published results. As a result, derived recombination coefficients are close to the published results. As a result, derived recombination coefficients are close to the published results. As a result, derived recombination coefficients are close to the published results. As a result, derived recombination coefficients are close to the published results. As a result, derived recombination coefficients are close to the published results. As a result, derived recombination coefficients are close to the published results. As a result, derived recombination coefficients are close to the published results. As a result, derived recombination coefficients are close to the published results. As a result, derived recombination coefficients are close to the published results. As a result, derived recombination coefficients are close to the published results. As a result, derived recombination coefficients are close to the published results. As a result, derived recombination coefficients are close to the published results. As a result, derived recombination coefficients are close to the published results. As a result, derived recombination coefficients are close to the published results. As a result, derived recombination coefficients are close to the published results. As a result, derived recombination coefficients are close to the published results. As a result, derived recombination coefficients are close to the published results. As a result, derived recombination coefficients are close to the published results. As a result, derived recombination coefficients are close to the published results. As a result, derived recombination coefficients are close to the published results. As a result, derived recombination coefficients are close to the published results. As a result, derived recombination coefficients are close to the published results. As a result, derived recombination coefficients are close to the published results. As a result, derived recombination coefficients are close to the published results. As a result, derived recombination coefficients are close to the published results. As a result, derived recombination coefficients are close to the published results. As a result, derived recombination coefficients are close to the published results. As a result, derived recombination coefficients are close to the published results. As a result, derived recombination coefficients are close to the published results. As a result, derived recombination coefficients are close to the published results. As a result, derived recombination coefficients are close to the published results. As a result, derived recombination coefficients are close to the published results. 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