鎵摻雜尖狀氧化鋅奈米柱陣列的場發射與光學特性之研究

Abstract

近年來，奈米結構材料應用於場發射顯示器的發射源已被廣泛地研究，其中以低溫製備的氧化鋅奈米柱最受到矚目。然而純的氧化鋅奈米柱本身形貌不足以應用於場發射顯示器上。因此在本論文中，我們藉由電漿蝕刻和摻雜方式去改善氧化鋅奈米柱的場發射特性。電漿蝕刻是利用氧氣離子去轟擊奈米柱。摻雜製程是利用水熱法將鎵離子摻雜進入奈米柱。最後，結合氧氣電漿蝕刻和摻雜鎵製程去形成尖狀的鎵摻雜氧化鋅奈米柱。由量測結果可知，尖狀的鎵摻雜氧化鋅奈米柱具有最佳的場發射特性與穩定性。此外，我們可以修補氧化鋅奈米柱的表面缺陷，如此降低其可見光強度。

In recent years, nanostructures applied to serve as emitters of field emission display have been widely researched. ZnO nanorod arrays synthesized by hydrothermal method have been attracted much attention due to low temperature process. However, as-grown ZnO nanorod arrays cannot be applied to field emission display due to their morphologies. To improve field emission properties, we use plasma-treated process and doping process to fabricate ZnO nanorod arrays in this thesis. For plasma-treated process, we used oxygen ions to bombard nanorods. For doping process, we doped gallium ions by hydrothermal method. Finally, sharp Ga-doped nanorod arrays were fabricated by the combination of plasma-treated process and doping process. From our results, sharp Ga-doped nanorod arrays exhibit the best field emission properties and stabilities. In addition, we can repair the defects on the ZnO nanorod surfaces, so that it can reduce the intensity of visible emission.