互補式金氧半電晶體混頻器特性比較及小信號模型之建立

Abstract

本論文主要研究一些符合2.4 GHz ISM頻帶規格的傳送機，並加以改善其操作特性。低中頻與直接轉換這兩種架構可說是目前最熱門的技術，因為這兩種架構外接元件少，極易積體化。不可否認，CMOS(互補式金屬氧化物半導體)製程對於未來小型化、低價格、低功率及高整合性的無線通訊市場將會扮演著很重要的角色。因此本篇論文使用CMOS製程技術來實現射頻前端電路之關鍵組件—低雜訊放大器、電壓控制振盪器及各種組態的寬頻混頻器。 射頻積體電路(RFIC)設計的重點不只侷限於電路上的設計，更要考慮到半導體的物理特性，所以本篇論文也提出電晶體小信號模型的參數萃取方法，使模擬環境必須要跟得上射頻積體電路設計的腳步。除此之外，本篇論文量測上所使用的On-wafer量測方式是由國家奈米元件實驗室---高頻量測實驗室所提供，On-wafer量測方式能忽略晶片額外的封裝效應，提供精確的實驗數據並真實地呈現出電路的本質特性。

This thesis introduces several architectures for 2.4 GHz ISM band to improve the characteristic of transceivers. Two types of these architectures－low-IF and direct conversions－are the most fashionable topology in a transceiver because of the integration. Undoubtedly, CMOS technology will play an important role in the wireless communication market. Therefore, this thesis uses CMOS process to implement the key components of RF front-end circuits：low noise amplifiers, voltage control oscillators and different types of wideband micromixers. The RFIC design focuses not only on circuit design, but also on the consideration of semiconductor’s physical characteristics. Hence, this thesis also offers different small signal modeling methods and enables simulation environment to keep up with the steps of RFIC design. Additionally, this study used on-wafer measurement methods which can ignore the package effects of circuits and offer exacter measurement data to show the intrinsic performance of circuits.