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dc.contributor.authorWang, DPen_US
dc.contributor.authorHuang, KMen_US
dc.contributor.authorShen, TLen_US
dc.contributor.authorHuang, KFen_US
dc.contributor.authorHuang, TCen_US
dc.date.accessioned2014-12-08T15:01:08Z-
dc.date.available2014-12-08T15:01:08Z-
dc.date.issued1998-01-01en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://hdl.handle.net/11536/46-
dc.description.abstractThe electroreflectance (ER) spectra of an undoped-n(+) type doped GaAs has been measured at various amplitudes of modulating fields (delta F). Many Franz-Keldysh oscillations were observed above the band gap energy, thus enabling the electric field (F) in the undoped layer to be determined. The F is obtained by applying fast Fourier transformation to the ER spectra. When delta F is small, the power spectrum can be clearly resolved into two peaks, which corresponds to heavy- and light-hole transitions. When delta F is less than similar to 1/8 of the built-in field (F(bi)similar to 77 420 V/cm), the F deduced from the ER is almost independent of delta F. However, when larger than this, F is increased with delta F. Also, when delta F is increased to larger than similar to 1/8 of F-bi, a shoulder appears on the right side of the heavy-hole peak of the power spectrum. The separation between the main peak and the shoulder of the heavy-hole peak becomes wider as delta F becomes larger. (C) 1998 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleThe effects of the magnitude of the modulation field on electroreflectance spectroscopy of undoped-n(+) type doped GaAsen_US
dc.typeArticleen_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume83en_US
dc.citation.issue1en_US
dc.citation.spage476en_US
dc.citation.epage479en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000071320400070-
dc.citation.woscount6-
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