| Title: | A CHARACTERIZATION MODEL FOR RAMP-VOLTAGE-STRESSED IV CHARACTERISTICS OF THIN THERMAL OXIDES GROWN ON SILICON SUBSTRATE |
| Authors: | CHEN, CF WU, CY 交大名義發表 工學院 National Chiao Tung University College of Engineering |
| Issue Date: | 1-Oct-1986 |
| URI: | http://hdl.handle.net/11536/4716 |
| ISSN: | 0038-1101 |
| Journal: | SOLID-STATE ELECTRONICS |
| Volume: | 29 |
| Issue: | 10 |
| Begin Page: | 1059 |
| End Page: | 1068 |
| Appears in Collections: | Articles |
- A CHARACTERIZATION MODEL FOR CONSTANT CURRENT STRESSED VOLTAGE-TIME CHARACTERISTICS OF THIN THERMAL OXIDES GROWN ON SILICON SUBSTRATE / CHEN, CF;WU, CY
- TRANSPORT-PROPERTIES OF THERMAL OXIDE-FILMS GROWN ON POLYCRYSTALLINE SILICON - MODELING AND EXPERIMENTS / WU, CY;CHEN, CF
- THE DIELECTRIC RELIABILITY OF INTRINSIC THIN SIO2-FILMS THERMALLY GROWN ON A HEAVILY DOPED SI SUBSTRATE - CHARACTERIZATION AND MODELING / CHEN, CF;WU, CY;LEE, MK;CHEN, CN
- TUNNEL OXIDE PREPARED BY THERMAL-OXIDATION OF THIN POLYSILICON FILM ON SILICON (TOPS) / WU, SL;LEE, CL;LEI, TF
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