製程參數對氮化鋁薄膜特性與生物相容性之影響

Abstract

本研究以薄膜沈積技術PVD沉積一氮化鋁壓電薄膜，利用壓電薄膜所產生的壓電特性，期能進而提高表面聲波生物感測裝置的效能而又能兼具生物相容性。 對於氮化鋁薄膜材料的成長機制，希望在由實驗過程中有更進一步的了解與認識。研究中利用多功能真空濺鍍系統(Sputtering)沉積氮化鋁(AlN)薄膜於晶圓上，接著分別進行物性測試及電性量測並以顯微結構的觀察以進一步了解壓電薄膜的特性以利微元件訊號的擷取。氮流量的增加，沉積的氮化鋁薄膜會產生相變化且晶格會由面心立方結構的氮化鋁薄膜轉為六方晶密結構的氮化鋁薄膜，片電阻也隨之增加，晶粒尺寸逐漸縮小，而由單晶趨向多晶狀態。 我們分析氮化鋁薄膜生物相容特性且發現氮化鋁薄膜氮化鋁具有良好的生物相容性，期待在未來使其結合表面聲波元件在生物感測方面有植入人體的可行性。

In this research, aluminum nitride thin film was deposited by sputtering. The piezoelectric properties of the aluminum nitride thin film can promote the effort of surface acoustic wave biosensor and it has excellent biocompatibility. Aluminum nitride thin film was performed by analyses such as physical and electrical measurement to realize the microstructure variation. It will affect the performance of biosensor integration. As the nitrogen contents increase, the preferred–orientation of (111) was transformed into (200), finally it was transformed into (002). So we got the parameter of sputter to make the excellent piezoelectric properties of aluminum nitride thin film. In addition, the sheet resistance will increase as the nitrogen contents increase. Its grain size will become smaller. It exist phase transformation from single crystal to poly crystal. Based on the above investigation, it is better for AlN thin film to integrate with biosensor.