高效率單接面非晶矽薄膜太陽能電池

Abstract

本研究利用射頻電漿輔助化學氣相沉積系統，使用氫氣稀釋的矽甲烷，沉積元件品質的氫化非晶矽薄膜，並作為太陽電池的吸收層。沉積薄膜時藉由改變吸收層基板與電極的距離、改變p型及本徵氫化非晶碳矽薄膜、氫化非晶矽薄膜、n型非晶矽薄膜厚度，以選取各層最佳厚度來製作太陽電池。透過p型非晶碳矽薄膜與本徵氫化非晶碳薄膜之間的能隙處理及在介面的氫電漿處理，來進一步提升太陽電池的光電轉換效率。本研究最佳之非晶矽薄膜太陽能轉換效率已提升至9.46%。

In the thesis, device quality hydrogenated amorphous silicon thin film was deposited by plasma enhanced chemical vapor deposition (PECVD) with hydrogen diluted silane. This high quality intrinsic hydrogenated amorphous silicon film was served as the absorber layer in solar cells. When depositing the devices, the electrode spacing and thicknesses of p-type, intrinsic amorphous silicon carbide, intrinsic layer, and n-type amorphous silicon were optimized to be incorporated into the solar cells. Methods of bandgap profiling in the buffer layer between p-layer and i-layer as well as hydrogen plasma treatment at each interface, were applied to optimize the solar cells. As a result, a record solar cell conversion efficiency was enhanced to 9.46%.