| Title: | AN ANALYTIC THRESHOLD-VOLTAGE MODEL FOR SHORT-CHANNEL ENHANCEMENT MODE N-CHANNEL MOSFETS WITH DOUBLE BORON CHANNEL IMPLANTATION |
| Authors: | WU, CY HUANG, GS CHEN, HH 交大名義發表 電控工程研究所 National Chiao Tung University Institute of Electrical and Control Engineering |
| Issue Date: | 1-Apr-1986 |
| URI: | http://hdl.handle.net/11536/4759 |
| ISSN: | 0038-1101 |
| Journal: | SOLID-STATE ELECTRONICS |
| Volume: | 29 |
| Issue: | 4 |
| Begin Page: | 387 |
| End Page: | 394 |
| Appears in Collections: | Articles |
- AN ACCURATE MOBILITY MODEL FOR THE I-V-CHARACTERISTICS OF N-CHANNEL ENHANCEMENT-MODE MOSFETS WITH SINGLE-CHANNEL BORON IMPLANTATION / WU, CY;DAIH, YW
- A SIMPLE PUNCHTHROUGH VOLTAGE MODEL FOR SHORT-CHANNEL MOSFETS WITH SINGLE CHANNEL IMPLANTATION IN VLSI / WU, CY;HSIAO, WZ;CHEN, HH
- ANOMALOUS REVERSE SHORT-CHANNEL EFFECT IN P+ POLYSILICON GATED P-CHANNEL MOSFET / CHANG, CY;LIN, CY;CHOU, JW;HSU, CCH;PAN, HT
- High performance 0.1 mu m dynamic threshold MOSFET using indium channel implantation / Chang, SJ;Chang, CY;Chao, TS;Huang, TY
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