標題: 硫化銦對摻雜硼之二氧化鈦染料敏化太陽能電池的影響
The Effects of Indium Sulfide Deposition on B-doped TiO2 Dye-Sensitized Solar Cells
作者: 李其峰
Lee, Chi-Feng
林明璋
Lin, Ming-Chang
應用化學系碩博士班
關鍵字: 染料敏化太陽能電池;硫化銦;DSSC;Indium Sulfide
公開日期: 2011
摘要: 本論文主要目的為最佳化摻雜硼二氧化鈦染料敏化電池與探討利用MOCVD成長硫化銦在摻雜硼二氧化鈦染料敏化電池所帶來的改良效果。實驗結果發現,此合成方法所合成出的硫化銦可由EDS分析圖以及XRD圖推測應為非結晶相的硫化銦,並將此非結晶相的硫化銦沉積在N3染料敏化太陽能電池中,其光電轉換效率可以獲得提升,在厚度約7 μm下,其光電轉換效率可以從5.46 % (未沉積硫化銦) 上升至6.10 % (沉積60分鐘硫化銦)。然而,當奈米晶二氧化鈦傳導層約為13 μm時,會有最佳的光電轉換效率 6.73 % ;而在最佳化厚度條件與最佳化硫化銦成長條件的結合下,光電轉換效率可以從6.73 % 提升至7.04 %
The objective of this work is to optimize the thickness of TiO2 layer with boron doping and to study the effect of indium sulfide prepared by MOCVD on the efficiency of the N3 dye sensitized solar cell. The EDS and XRD analyses of the deposited indium sulfide show that it should be amorphous. The results indicate that the efficiency of the N3 DSSC can be enhanced from 5.46 % to 6.10 % by indium sulfide deposited on the TiO2 with 7 μm thickness. Using the best bare 10% boron doped TiO2.with 13 μm thickness, the enhancement by indium sulfide was found to increase from 6.73% to 7.04% for the N3 DSSC.
URI: http://140.113.39.130/cdrfb3/record/nctu/#GT079825528
http://hdl.handle.net/11536/47617
Appears in Collections:Thesis