SELECTIVE EPITAXY ON SILICON BY ATMOSPHERIC-PRESSURE SIH4-HCL CVD

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	HSIEH, TP	en_US
dc.contributor.author	LEE, CL	en_US
dc.contributor.author	LEI, TF	en_US
dc.date.accessioned	2014-12-08T15:06:12Z	-
dc.date.available	2014-12-08T15:06:12Z	-
dc.date.issued	1986-03-01	en_US
dc.identifier.issn	0013-4651	en_US
dc.identifier.uri	http://hdl.handle.net/11536/4765	-
dc.language.iso	en_US	en_US
dc.title	SELECTIVE EPITAXY ON SILICON BY ATMOSPHERIC-PRESSURE SIH4-HCL CVD	en_US
dc.type	Meeting Abstract	en_US
dc.identifier.journal	JOURNAL OF THE ELECTROCHEMICAL SOCIETY	en_US
dc.citation.volume	133	en_US
dc.citation.issue	3	en_US
dc.citation.spage	C105	en_US
dc.citation.epage	C105	en_US
dc.contributor.department	電控工程研究所	zh_TW
dc.contributor.department	Institute of Electrical and Control Engineering	en_US
dc.identifier.wosnumber	WOS:A1986A435800251	-
dc.citation.woscount	0	-
顯示於類別：	期刊論文