以傳輸量測表面覆蓋層對非晶態IGZO薄膜遷移率的影響

Abstract

本研究探討a-IGZO其表面覆蓋氧化物與霍爾遷移率之關係。a-IGZO為一高載子遷移率的新興透明導電氧化物，本實驗欲討論a-IGZO薄膜未覆蓋、片狀覆蓋及島狀覆蓋金屬鈣使其表面缺氧，其電性參數的變化。以van der Pauw之電阻率量測及霍爾量測，求得不同覆蓋狀況下a-IGZO之電阻率ρ (resistivity)、電子載子濃度n (carrier concentration)與霍爾遷移率μ (mobility)。本研究發現載子濃度有顯著的提高，但霍爾遷移率並未得到與元件量測結果相同的高遷移率。

IGZO is a newly developed transparent conducting oxide with higher carrier mobility than traditional materials. In this study, the Hall mobility of distinct surface capping a-IGZO thin films is discussed. The electrical properties of a-IGZO thin films with sheet capping and island capping of calcium were measured, respectively the a-IGZO thin films without surface coating were used as the control group. The resistivity and Hall measurements were undertaken using van der Pauw method. The resistivity (ρ), carrier concentration (n), and Hall mobility (μ) were then calculated from a-IGZO thin films with different types of surface coating. The carrier concentration increases in the thin film with surface coating of calcium. However, the Hall mobility is not improved as predicted.