Improved flash cell performance by N2O annealing of interpoly oxide

doi:10.1109/55.596931

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Jong, FC	en_US
dc.contributor.author	Huang, TY	en_US
dc.contributor.author	Chao, TS	en_US
dc.contributor.author	Lin, HC	en_US
dc.contributor.author	Leu, LY	en_US
dc.contributor.author	Young, K	en_US
dc.contributor.author	Lin, CH	en_US
dc.contributor.author	Chiu, KY	en_US
dc.date.accessioned	2014-12-08T15:01:42Z	-
dc.date.available	2014-12-08T15:01:42Z	-
dc.date.issued	1997-07-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/55.596931	en_US
dc.identifier.uri	http://hdl.handle.net/11536/484	-
dc.description.abstract	In this letter, we report the effects of N2O annealing of interpoly oxide on flash cell performance. It is demonstrated that by adding an N2O anneal after interpoly oxide formation, improved cycling endurance is achieved, The program and erase efficiencies are also improved significantly, compared to the control cell without N2O anneal. The cells with N2O anneal show higher cell current (i.e., drain current), which can be ascribed to a lower threshold voltage and higher transconductance, compared to the control cell.	en_US
dc.language.iso	en_US	en_US
dc.title	Improved flash cell performance by N2O annealing of interpoly oxide	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/55.596931	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	18	en_US
dc.citation.issue	7	en_US
dc.citation.spage	343	en_US
dc.citation.epage	345	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1997XG99700012	-
dc.citation.woscount	9	-
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