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dc.contributor.authorWU, CYen_US
dc.contributor.authorHUANG, YTen_US
dc.date.accessioned2014-12-08T15:06:16Z-
dc.date.available2014-12-08T15:06:16Z-
dc.date.issued1984en_US
dc.identifier.issn0038-1101en_US
dc.identifier.urihttp://hdl.handle.net/11536/4855-
dc.language.isoen_USen_US
dc.titleTHE METAL-INSULATOR-SEMICONDUCTOR-SWITCH (MISS) DEVICE USING THERMAL NITRIDE FILM AS THE TUNNELING INSULATORen_US
dc.typeArticleen_US
dc.identifier.journalSOLID-STATE ELECTRONICSen_US
dc.citation.volume27en_US
dc.citation.issue2en_US
dc.citation.spage203en_US
dc.citation.epage206en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department電控工程研究所zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.identifier.wosnumberWOS:A1984SF60600013-
dc.citation.woscount5-
Appears in Collections:Articles