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dc.contributor.authorLU, CYen_US
dc.contributor.authorLU, NCCen_US
dc.contributor.authorWANG, CSen_US
dc.date.accessioned2014-12-08T15:06:16Z-
dc.date.available2014-12-08T15:06:16Z-
dc.date.issued1984en_US
dc.identifier.issn0038-1101en_US
dc.identifier.urihttp://hdl.handle.net/11536/4856-
dc.language.isoen_USen_US
dc.titleEFFECTS OF GRAIN-BOUNDARY TRAPPING-STATE ENERGY-DISTRIBUTION ON THE ACTIVATION-ENERGY OF RESISTIVITY OF POLYCRYSTALLINE-SILICON FILMSen_US
dc.typeArticleen_US
dc.identifier.journalSOLID-STATE ELECTRONICSen_US
dc.citation.volume27en_US
dc.citation.issue5en_US
dc.citation.spage463en_US
dc.citation.epage466en_US
dc.contributor.department電控工程研究所zh_TW
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.identifier.wosnumberWOS:A1984TA25400010-
dc.citation.woscount13-
顯示於類別:期刊論文