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dc.contributor.authorChen, Hou-Guangen_US
dc.contributor.authorHsu, Nai-Fangen_US
dc.contributor.authorChu, Jung-Tangen_US
dc.contributor.authorYao, Hsin-Hungen_US
dc.contributor.authorLu, Tien-Changen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorWang, Shing-Chungen_US
dc.date.accessioned2014-12-08T15:06:17Z-
dc.date.available2014-12-08T15:06:17Z-
dc.date.issued2007-04-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.46.2574en_US
dc.identifier.urihttp://hdl.handle.net/11536/4872-
dc.description.abstractWe propose a method of realizing strong ultraviolet emission from InGaN/AlGaN multiple quantum wells (MQWs) grown by a multi-step process. During growth of the quantum well layer, only trimethylindium (TMIn) and ammonia were introduced into the reactor, followed by a growth interruption treatment before growth of AlGaN barriers. The growth temperature of QWs dominates the photoluminescence (PL) emission peak position and surface morphologies of the films. It was found that the PL spectra of the samples with MQWs grown at 685 degrees C showed a strong UV emission at 380 nm. The correlation between surface structures and optical characteristics was studied by cathodoluminescence microscopy. The electroluminescence spectra under various injection currents showed a weak carrier localization effect induced by a quantum-confined Stark effect in the MQW.en_US
dc.language.isoen_USen_US
dc.subjectInNen_US
dc.subjectInGaNen_US
dc.subjectmultiple quantum wellsen_US
dc.subjectCLen_US
dc.subjectLEDen_US
dc.titleStrong ultraviolet emission from InGaN/AlGaN multiple quantum well grown by multi-step processen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1143/JJAP.46.2574en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERSen_US
dc.citation.volume46en_US
dc.citation.issue4Ben_US
dc.citation.spage2574en_US
dc.citation.epage2577en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000247050200159-
Appears in Collections:Conferences Paper


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