TUNGSTEN SILICIDE PREPARED BY COEVAPORATION OF W AND SI SUBSTANCES

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	CHEN, MC	en_US
dc.contributor.author	JOHN, DY	en_US
dc.date.accessioned	2014-12-08T15:06:18Z	-
dc.date.available	2014-12-08T15:06:18Z	-
dc.date.issued	1984	en_US
dc.identifier.issn	0013-4651	en_US
dc.identifier.uri	http://hdl.handle.net/11536/4887	-
dc.language.iso	en_US	en_US
dc.title	TUNGSTEN SILICIDE PREPARED BY COEVAPORATION OF W AND SI SUBSTANCES	en_US
dc.type	Meeting Abstract	en_US
dc.identifier.journal	JOURNAL OF THE ELECTROCHEMICAL SOCIETY	en_US
dc.citation.volume	131	en_US
dc.citation.issue	3	en_US
dc.citation.spage	C87	en_US
dc.citation.epage	C87	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1984SG56000140	-
dc.citation.woscount	0	-
顯示於類別：	期刊論文