| Title: | EFFECT OF LASER GETTERING SCHEME IN SILICON |
| Authors: | LIOU, JY LIN, JM CHEN, MC 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
| Issue Date: | 1984 |
| URI: | http://hdl.handle.net/11536/4888 |
| ISSN: | 0013-4651 |
| Journal: | JOURNAL OF THE ELECTROCHEMICAL SOCIETY |
| Volume: | 131 |
| Issue: | 3 |
| Begin Page: | C88 |
| End Page: | C88 |
| Appears in Collections: | Articles |
- POST-EPITAXIAL POLYSILICON AND SI3N4 GETTERING IN SILICON / CHEN, MC;SILVESTRI, VJ
- Improving the electrical properties of NILC poly-Si films using a gettering substrate / Hu, Chen-Ming;Wu, YewChung Sermon;Lin, Chi-Ching
- Using Phosphorus-Doped alpha-Si Gettering Layers to Improve NILC Poly-Si TFT Performance / Wang, Bau-Ming;Wu, YewChung Sermon
- An Oxygen Gettering Scheme for Improving Device Mobility and Subthreshold Swing of InGaZnO-Based Thin-Film Transistor / Hsu, Hsiao-Hsuan;Chang, Chun-Yen;Cheng, Chun-Hu;Chiou, Shan-Haw;Huang, Chiung-Hui
- Improved Gettering Efficiency of Ni from Nickel-Mediated Crystallization Silicon Using Phosphorus-Doped Amorphous Silicon / Wang, Bau-Ming;Wu, Yewchung Sermon
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