奈米小球填補磷酸與氫氧化鉀之蝕刻缺陷在紫外光發光二極體的應用

Abstract

本論文中,我們比較了磷酸與氫氧化鉀蝕刻液在氮化鎵表面上所造成的缺陷型態,並且發現磷酸所蝕刻出的缺陷型態對應至非輻射複合中心. 我們對此非幅射複合中心做缺陷阻擋,發現重新成長發光二極體結構後, 其內部量子效應提升了17.1%. 同時我們使用矽膠奈米小球當作阻擋材料做成發光二極體,簡化了傳統式電漿增強化學氣相沉積法.在反射率的表現上,接近361奈米波段提升了2%,我們認為這種奈米小球在紫外光波段可以當作反射鏡來使用.

In this thesis, we compared defect passivation process by using H3PO4 and KOH etching solution. We observed GaN etching morphology.The H3PO4 prefer to etch screw type dislocation which is treated as non-radiative centers. On the other hand, KOH prefer to attack edge type dislocation. We simplified the defect passivation process by using silica nanospheres as blocking material, which is much cheaper and convenience than using plasma-enhanced chemical vapor deposition. By blocking the non-radiative centers, the internal quantum efficiency has been enhanced 17.1%. The reflection of embedded silica nanospheres were enhanced about 2% in 361nm wavelength, which verified the silica nanosphere could act as reflector in ultraviolet.