标题: High-k/Metal Gate 与 SOI金氧半场效电晶体RTN分析与可靠度的研究
Investigation on RTN and Reliability of High-k/Metal Gate and SOI MOSFETs
作者: 罗弘聘
Luo,Hong-Ping
张鼎张
Chang,Ting-Chang
电子研究所
关键字: 高介电常数氧化层金属闸极金氧半电晶体;矽覆绝缘金氧半场效电晶体;随机杂讯分析;High-k/Metal Gate MOSFETs;SOI MOSFETs;RTN
公开日期: 2011
摘要: 近年来积体电路随着摩尔定律的微缩,增加了单位面积中的电晶体密度,降低制程成本提高了IC的运作效率。虽然电晶体的微缩增加了IC元件的性能与经济的效益,但其中还是必须去克服几个问题:1.随着定电场微缩的过程中,必须降低闸极氧化层SiO2 的厚度,如此会导致闸极漏电并造成能量的消耗。2.随着电晶体微缩至深次微米尺度,其必须面对短通道效应与物理微缩的极限。因此未来的ULSI元件而言也提出了先进的技术到CMOS制程当中,克服了能量的消耗以及元件的运作效率的问题,其中包括了SOI元件以及high-k/metal gate制程技术。
当元件微缩至深次微米尺度时,RTN(或着称作RTS)可探讨元件的缺陷位置以及电性上的分析。随着元件尺寸的微缩,在元件氧化层的费米能阶附近有机会存在单颗或是数颗的缺陷,并且可由RTN来深入的观察,在此我们藉由RTN去探讨SOI与high-k/metal gate元件去做一个深入的讨论。
In the past years, chips complexity have increased at an exponential rate, because of the constant shrinking of device size to increase device density, improved manufacturing practice to reduce fabrication cost and increase IC’s performance. Although scaling devices can improve IC’s performance and be economically fabricated, it still have to overcome some issues. First, when devices scaled down it have to follow the constant electric field, so the thickness of gate dielectric, namely SiO2 need to be lessened. This will increase gate leakage current and lead to more power dissipation. Secondly, when scaling device down to deep sub-micrometer, MOSFETs face short channel effect and physical scaling limit. Therefore, for the future ULSI devices, there are some advance technology have been proposed and introduced into CMOS fabrication process to achieve higher performance and lower power consumption, which includes silicon-on-insulator (SOI) technology and high-k/metal gate stack technology.
When devices scaled down to deep sub-micrometer the random telegraph noise (RTN) or so-called random telegraph signal (RTS) will be observed and influence device dynamic performance. In deep sub-micrometer MOSFETs, it is possible to exist one or few oxide traps in high-k or SiO2 layer which were distributed over the vicinity of Si surface Fermi level. These traps can be investigated by RTS. In this article, we use RTN to focus on high-k/metal gate and silicon-on-insulator device to research electrical characteristics.
URI: http://140.113.39.130/cdrfb3/record/nctu/#GT079911523
http://hdl.handle.net/11536/49071
显示于类别:Thesis