Stripe-geometry GaAs-InGaAs laser diode with back-side contact on silicon by epitaxial lift-off

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DC 欄位	值	語言
dc.contributor.author	Fan, JC	en_US
dc.contributor.author	Chen, KY	en_US
dc.contributor.author	Lin, G	en_US
dc.contributor.author	Lee, CP	en_US
dc.date.accessioned	2014-12-08T15:01:43Z	-
dc.date.available	2014-12-08T15:01:43Z	-
dc.date.issued	1997-06-05	en_US
dc.identifier.issn	0013-5194	en_US
dc.identifier.uri	http://hdl.handle.net/11536/491	-
dc.description.abstract	The transfer of a preprocessed stripe-geometry GaAs-InGaAs laser diode film onto a Pd/Ge/Pd coated n(+)-Si substrate is reported with the backside contact on Si using epitaxial lifted-off (ELO) technology. The Pd/Ge/Pd metal layers provide ohmic contacts to both the Si substrate and the GaAs film, making vertical conduction through the Si substrate possible. No device degradation was observed after the ELO process and comparable results were obtained for the ELO laser diodes and the diodes without the ELO process.	en_US
dc.language.iso	en_US	en_US
dc.subject	semiconductor junction lasers	en_US
dc.subject	epitaxial lift-off	en_US
dc.title	Stripe-geometry GaAs-InGaAs laser diode with back-side contact on silicon by epitaxial lift-off	en_US
dc.type	Article	en_US
dc.identifier.journal	ELECTRONICS LETTERS	en_US
dc.citation.volume	33	en_US
dc.citation.issue	12	en_US
dc.citation.spage	1095	en_US
dc.citation.epage	1096	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
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