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dc.contributor.authorFan, JCen_US
dc.contributor.authorChen, KYen_US
dc.contributor.authorLin, Gen_US
dc.contributor.authorLee, CPen_US
dc.date.accessioned2014-12-08T15:01:43Z-
dc.date.available2014-12-08T15:01:43Z-
dc.date.issued1997-06-05en_US
dc.identifier.issn0013-5194en_US
dc.identifier.urihttp://hdl.handle.net/11536/491-
dc.description.abstractThe transfer of a preprocessed stripe-geometry GaAs-InGaAs laser diode film onto a Pd/Ge/Pd coated n(+)-Si substrate is reported with the backside contact on Si using epitaxial lifted-off (ELO) technology. The Pd/Ge/Pd metal layers provide ohmic contacts to both the Si substrate and the GaAs film, making vertical conduction through the Si substrate possible. No device degradation was observed after the ELO process and comparable results were obtained for the ELO laser diodes and the diodes without the ELO process.en_US
dc.language.isoen_USen_US
dc.subjectsemiconductor junction lasersen_US
dc.subjectepitaxial lift-offen_US
dc.titleStripe-geometry GaAs-InGaAs laser diode with back-side contact on silicon by epitaxial lift-offen_US
dc.typeArticleen_US
dc.identifier.journalELECTRONICS LETTERSen_US
dc.citation.volume33en_US
dc.citation.issue12en_US
dc.citation.spage1095en_US
dc.citation.epage1096en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
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