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dc.contributor.authorWU, CYen_US
dc.contributor.authorCHIEN, HCen_US
dc.date.accessioned2014-12-08T15:06:21Z-
dc.date.available2014-12-08T15:06:21Z-
dc.date.issued1983en_US
dc.identifier.issn0038-1101en_US
dc.identifier.urihttp://hdl.handle.net/11536/4935-
dc.language.isoen_USen_US
dc.titleTHE EFFECT OF THE MINORITY-CARRIER DISTRIBUTION ON THE THRESHOLD VOLTAGE OF A MOSFETen_US
dc.typeArticleen_US
dc.identifier.journalSOLID-STATE ELECTRONICSen_US
dc.citation.volume26en_US
dc.citation.issue5en_US
dc.citation.spage371en_US
dc.citation.epage381en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department電控工程研究所zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.identifier.wosnumberWOS:A1983QR28300001-
dc.citation.woscount0-
顯示於類別:期刊論文