A COMPUTER-AIDED SIMULATION-MODEL FOR THE IV CHARACTERISTIC OF M-N-P SILICON SCHOTTKY-BARRIER DIODES PRODUCED BY USE OF LOW-ENERGY ARSENIC-ION IMPLANTATION

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DC Field	Value	Language
dc.contributor.author	WU, CY	en_US
dc.contributor.author	CHANG, MC	en_US
dc.contributor.author	SHEY, AJ	en_US
dc.date.accessioned	2014-12-08T15:06:22Z	-
dc.date.available	2014-12-08T15:06:22Z	-
dc.date.issued	1983	en_US
dc.identifier.issn	0038-1101	en_US
dc.identifier.uri	http://hdl.handle.net/11536/4938	-
dc.language.iso	en_US	en_US
dc.title	A COMPUTER-AIDED SIMULATION-MODEL FOR THE IV CHARACTERISTIC OF M-N-P SILICON SCHOTTKY-BARRIER DIODES PRODUCED BY USE OF LOW-ENERGY ARSENIC-ION IMPLANTATION	en_US
dc.type	Article	en_US
dc.identifier.journal	SOLID-STATE ELECTRONICS	en_US
dc.citation.volume	26	en_US
dc.citation.issue	9	en_US
dc.citation.spage	893	en_US
dc.citation.epage	900	en_US
dc.contributor.department	交大名義發表	zh_TW
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	National Chiao Tung University	en_US
dc.contributor.department	Department of Electrophysics	en_US
dc.identifier.wosnumber	WOS:A1983RJ52000010	-
dc.citation.woscount	3	-
Appears in Collections:	Articles