标题: | A COMPUTER-AIDED SIMULATION-MODEL FOR THE IV CHARACTERISTIC OF M-N-P SILICON SCHOTTKY-BARRIER DIODES PRODUCED BY USE OF LOW-ENERGY ARSENIC-ION IMPLANTATION |
作者: | WU, CY CHANG, MC SHEY, AJ 交大名义发表 电子物理学系 National Chiao Tung University Department of Electrophysics |
公开日期: | 1983 |
URI: | http://hdl.handle.net/11536/4938 |
ISSN: | 0038-1101 |
期刊: | SOLID-STATE ELECTRONICS |
Volume: | 26 |
Issue: | 9 |
起始页: | 893 |
结束页: | 900 |
显示于类别: | Articles |