标题: A COMPUTER-AIDED SIMULATION-MODEL FOR THE IV CHARACTERISTIC OF M-N-P SILICON SCHOTTKY-BARRIER DIODES PRODUCED BY USE OF LOW-ENERGY ARSENIC-ION IMPLANTATION
作者: WU, CY
CHANG, MC
SHEY, AJ
交大名义发表
电子物理学系
National Chiao Tung University
Department of Electrophysics
公开日期: 1983
URI: http://hdl.handle.net/11536/4938
ISSN: 0038-1101
期刊: SOLID-STATE ELECTRONICS
Volume: 26
Issue: 9
起始页: 893
结束页: 900
显示于类别:Articles