A MODEL FOR BORON DEPOSITION IN SILICON USING A BBR3 SOURCE

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DC Field	Value	Language
dc.contributor.author	GUO, SF	en_US
dc.contributor.author	CHEN, WS	en_US
dc.date.accessioned	2014-12-08T15:06:23Z	-
dc.date.available	2014-12-08T15:06:23Z	-
dc.date.issued	1982	en_US
dc.identifier.issn	0013-4651	en_US
dc.identifier.uri	http://hdl.handle.net/11536/4956	-
dc.language.iso	en_US	en_US
dc.title	A MODEL FOR BORON DEPOSITION IN SILICON USING A BBR3 SOURCE	en_US
dc.type	Article	en_US
dc.identifier.journal	JOURNAL OF THE ELECTROCHEMICAL SOCIETY	en_US
dc.citation.volume	129	en_US
dc.citation.issue	7	en_US
dc.citation.spage	1592	en_US
dc.citation.epage	1596	en_US
dc.contributor.department	交大名義發表	zh_TW
dc.contributor.department	電控工程研究所	zh_TW
dc.contributor.department	National Chiao Tung University	en_US
dc.contributor.department	Institute of Electrical and Control Engineering	en_US
dc.identifier.wosnumber	WOS:A1982NW36700039	-
dc.citation.woscount	4	-
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