利用鑽石複合材料當作高亮度發光二極體的散熱管理

Abstract

本研究的主要想法是將人造鑽石顆粒直接與晶片端接觸，提供一個導熱的通道。一共分為兩個主題：首先是在矽晶圓上製作規則的凹槽陣列，接著將人造鑽石顆粒填入凹槽，再將發光二極體結構轉移到高散熱的鑽石複合基板。主要是因為鑽石是熱的良導體，相較於原本的藍寶石基板有更佳的散熱性質，可以使元件在更高的飽和電留下驅動，以達到高功率的目標。然而鑽石的硬度極高並且無法導電，所以矽晶圓的部分就提供了後續製成的切割走道以及導電的通道。在實驗中分為圖案的選擇、填充人造鑽石、晶圓接合、雷射剝離、元件製作，分別分析討論，藉由改變製程來完成我們的想要的元件。 第二個主題是在矽晶圓上製作一個單層高密度分布的人造鑽石顆粒，利用晶元接合技術，選擇適當的接合材料做為封裝的固晶材料。在實驗中分為製作單層高密度分佈人造鑽石顆粒、焊錫與BCB接合、結構熱阻量測分別分析討論。在封裝領域提供一個新的想法藉由鑽石的高導熱性質，來提升固晶材料的散熱能力。

In this thesis, the main idea is the artificial diamond particles directly contact with the chip side, to provide a channel of heat dissipation. The thesis is divided into two themes: first, the artificial diamond particles were filled into the patterns of Si wafer, and then transferred LED to this high thermal conductivity diamond composite substrate. Because diamond is a good conductor of heat, compared with the sapphire substrate have a better heat dissipation properties. The transferred LED device could be operated in a much higher injection forward current and output power. However, diamond is extremely hard and not conductive, so the part of Si wafer is the role as cutting the aisle in follow-up processes and conductive channel. We have several issues including: pattern choice, fill artificial diamonds, wafer bonding, laser lift-off, and device fabrication. We change experimental conditions and processes for our desired device. The second theme is the production of a single layer of high density distribution of artificial diamond particles on Si wafer, and using wafer bonding technique, and selecting the appropriate bonding material as die-attach material. The experiment is divided into production of a single layer of high density distribution of artificial diamond particles on Si wafer, solder and BCB bonding ,and structural thermal resistance measurement were analyzed and discussed. Finally, we propose a new idea in electric packaging by using diamond which has high thermal conductivity to improve the ability of heat dissipation of die-attach material.