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dc.contributor.authorWU, CYen_US
dc.date.accessioned2014-12-08T15:06:24Z-
dc.date.available2014-12-08T15:06:24Z-
dc.date.issued1982en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://hdl.handle.net/11536/4971-
dc.identifier.urihttp://dx.doi.org/10.1063/1.331384en_US
dc.language.isoen_USen_US
dc.titleINTERFACIAL LAYER-THERMIONIC-DIFFUSION THEORY FOR THE SCHOTTKY-BARRIER DIODEen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.331384en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume53en_US
dc.citation.issue8en_US
dc.citation.spage5947en_US
dc.citation.epage5950en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department電控工程研究所zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.identifier.wosnumberWOS:A1982PA16900084-
dc.citation.woscount32-
顯示於類別:期刊論文