完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Shiu, Jian-Jhin | en_US |
dc.contributor.author | Chen, Wei-Li | en_US |
dc.contributor.author | Lin, Der-Yuh | en_US |
dc.contributor.author | Yang, Chu-Shou | en_US |
dc.contributor.author | Chou, Wu-Ching | en_US |
dc.date.accessioned | 2014-12-08T15:06:25Z | - |
dc.date.available | 2014-12-08T15:06:25Z | - |
dc.date.issued | 2007-04-01 | en_US |
dc.identifier.issn | 0021-4922 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1143/JJAP.46.2481 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/4981 | - |
dc.description.abstract | The optical characterization of type-II Zn0.97Mn0.03Se/ZnSe0.92Te0.08 multiple-quantum-well structures has been studied using photoluminescence (PL), temperature-dependent PL, and power-dependent PL. The PL data reveal that the band alignment of the ZnMnSe/ZnSeTe multiple quantum wells (MQWs) is type II. In comparison with the theoretical calculation based on solving the Schrodinger equation of a square potential well, the valence band offset is estimated to be 0.6 eV. From the power-dependent PL spectra, it is observed that the peak position of PL spectra shows a blue shift on increasing the excitation power. The blue shift can be interpreted in terms of the band-bending effect due to spatially separated carriers in a type-II alignment and the band filling effect. The thermal activation energy (EA) for quenching the PL intensity was determined from temperature-dependent PL spectra. The thermal activation energy was found to decrease as the thickness of ZnMnSe or ZnSeTe layers decreased. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | photoluminescence | en_US |
dc.subject | ZnMnSe | en_US |
dc.subject | ZnSeTe | en_US |
dc.subject | thermal activation energy | en_US |
dc.subject | multiple quantum well | en_US |
dc.title | Photoluminescence characterization of type-II Zn0.97Mn0.03Se/ZnSe0.92Te0.08 multiple-quantum-well structures | en_US |
dc.type | Article; Proceedings Paper | en_US |
dc.identifier.doi | 10.1143/JJAP.46.2481 | en_US |
dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | en_US |
dc.citation.volume | 46 | en_US |
dc.citation.issue | 4B | en_US |
dc.citation.spage | 2481 | en_US |
dc.citation.epage | 2485 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.identifier.wosnumber | WOS:000247050200139 | - |
顯示於類別: | 會議論文 |