标题: | Reduction of leakage current in chemical-vapor-deposited Ta2O5 thin films by furnace N2O annealing |
作者: | Sun, SC Chen, TF 电子工程学系及电子研究所 奈米中心 Department of Electronics Engineering and Institute of Electronics Nano Facility Center |
公开日期: | 1-六月-1997 |
摘要: | In this brief, we present a post-deposition annealing technique that employs furnace annealing in N2O (FN2O) to reduce the leakage current of chemical-vapor-deposited tantalum penta-oxide (CVD Ta2O5) thin films, Compared with furnace annealing in O-2 (FO) and rapid thermal annealing in N2O (RTN2O), FN2O annealing proved to have the lowest leakage current and the most reliable time-dependent dielectric breakdown (TDDB). |
URI: | http://dx.doi.org/10.1109/16.585562 http://hdl.handle.net/11536/500 |
ISSN: | 0018-9383 |
DOI: | 10.1109/16.585562 |
期刊: | IEEE TRANSACTIONS ON ELECTRON DEVICES |
Volume: | 44 |
Issue: | 6 |
起始页: | 1027 |
结束页: | 1029 |
显示于类别: | Articles |
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