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dc.contributor.authorYang, C. S.en_US
dc.contributor.authorLai, Y. J.en_US
dc.contributor.authorChou, W. C.en_US
dc.contributor.authorChen, D. S.en_US
dc.contributor.authorWang, J. S.en_US
dc.contributor.authorChien, K. F.en_US
dc.contributor.authorShih, Y. T.en_US
dc.date.accessioned2014-12-08T15:06:27Z-
dc.date.available2014-12-08T15:06:27Z-
dc.date.issued2007-04-01en_US
dc.identifier.issn0022-0248en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.jcrysgro.2006.11.176en_US
dc.identifier.urihttp://hdl.handle.net/11536/5015-
dc.description.abstractThis study investigates the growth mode of highly lattice-mismatch (similar to 14%) CdTe self-assembled quantum dots grown on a ZnSe buffer-layer by molecular beam epitaxy. Two growth processes were used to prepare the samples. For the group-I samples, Te and Cd sources were alternately used to deposit a CdTe coverage layer of 0.6 to 8.0 mono-layers on a Zn-stabilized ZnSe buffer layer. The growth process of group-II samples was reversed; that is, the Cd beam was supplied first on a Se-stabilized ZnSe buffer layer. The optical spectra, including the power-dependent, time-resolved photoluminescence (PL) and PL excitation measurement, demonstrate a ZnTe-like and a CdSe-like two-dimensional precursor layer (wetting layer) in the group-I and group-II samples, respectively. Following the formation of the precursor layer, three-dimensional highly strained CdTe quantum dots were formed. Accordingly, the growth of CdTe self-assembled quantum-dot structures was attributed to the quasi-Stranski-Krastanow mode. (c) 2006 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectgrowth modelsen_US
dc.subjectmolecular beam epitaxyen_US
dc.subjectquantum dotsen_US
dc.subjectcadmium compoundsen_US
dc.subjectsemiconducting II-VI materialsen_US
dc.titleQuasi-Stranski-Krastanow growth mode of self-assembled CdTe quantum dots grown on ZnSe by molecular beam epitaxyen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/j.jcrysgro.2006.11.176en_US
dc.identifier.journalJOURNAL OF CRYSTAL GROWTHen_US
dc.citation.volume301en_US
dc.citation.issueen_US
dc.citation.spage301en_US
dc.citation.epage305en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000246015800070-
Appears in Collections:Conferences Paper


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