| Title: | A NEW CONDUCTION MODEL FOR POLYCRYSTALLINE SILICON FILMS |
| Authors: | LU, NCC GERZBERG, L LU, CY MEINDL, JD 電控工程研究所 Institute of Electrical and Control Engineering |
| Issue Date: | 1981 |
| URI: | http://hdl.handle.net/11536/5029 |
| ISSN: | 0193-8576 |
| Journal: | ELECTRON DEVICE LETTERS |
| Volume: | 2 |
| Issue: | 4 |
| Begin Page: | 95 |
| End Page: | 98 |
| Appears in Collections: | Articles |
- 複晶矽薄膜電晶體在高電場效應下之電性分析與模型建立 / 楊凱傑;Kai-Chieh Yang;冉曉雯;Hsiao-Wen Zan
- ULTRATHIN TEXTURED POLYCRYSTALLINE OXIDE WITH A HIGH ELECTRON CONDUCTION EFFICIENCY PREPARED BY THERMAL-OXIDATION OF THIN POLYCRYSTALLINE SILICON FILM ON N+ POLYCRYSTALLINE SILICON / WU, SL;LEE, CL;LEI, TF
- A NEW COMPUTER-AIDED SIMULATION-MODEL FOR POLYCRYSTALLINE SILICON FILM RESISTORS / WU, CY;KEN, WD
- Analysis of negative bias temperature instability in body-tied low-temperature polycrystalline silicon thin-film transistors / Chen, Chih-Yang;Ma, Ming-Wen;Chen, Wei-Cheng;Lin, Hsiao-Yi;Yeh, Kuan-Lin
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