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DC FieldValueLanguage
dc.contributor.authorLEE, MKen_US
dc.contributor.authorLIU, SDen_US
dc.contributor.authorLEE, CLen_US
dc.date.accessioned2014-12-08T15:06:27Z-
dc.date.available2014-12-08T15:06:27Z-
dc.date.issued1981en_US
dc.identifier.issn0013-4651en_US
dc.identifier.urihttp://hdl.handle.net/11536/5031-
dc.language.isoen_USen_US
dc.titleSI OXIDATION IN O2-N2 IN THE PRESENCE OF HCLen_US
dc.typeMeeting Abstracten_US
dc.identifier.journalJOURNAL OF THE ELECTROCHEMICAL SOCIETYen_US
dc.citation.volume128en_US
dc.citation.issue3en_US
dc.citation.spageC103en_US
dc.citation.epageC103en_US
dc.contributor.department奈米中心zh_TW
dc.contributor.departmentNano Facility Centeren_US
dc.identifier.wosnumberWOS:A1981LF08600330-
dc.citation.woscount0-
Appears in Collections:Articles


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