Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | WU, CY | en_US |
| dc.date.accessioned | 2014-12-08T15:06:28Z | - |
| dc.date.available | 2014-12-08T15:06:28Z | - |
| dc.date.issued | 1980 | en_US |
| dc.identifier.issn | 0021-8979 | en_US |
| dc.identifier.uri | http://hdl.handle.net/11536/5039 | - |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.328115 | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | INTERFACIAL LAYER THEORY OF THE SCHOTTKY-BARRIER DIODES | en_US |
| dc.type | Article | en_US |
| dc.identifier.doi | 10.1063/1.328115 | en_US |
| dc.identifier.journal | JOURNAL OF APPLIED PHYSICS | en_US |
| dc.citation.volume | 51 | en_US |
| dc.citation.issue | 7 | en_US |
| dc.citation.spage | 3786 | en_US |
| dc.citation.epage | 3789 | en_US |
| dc.contributor.department | 電控工程研究所 | zh_TW |
| dc.contributor.department | 奈米中心 | zh_TW |
| dc.contributor.department | Institute of Electrical and Control Engineering | en_US |
| dc.contributor.department | Nano Facility Center | en_US |
| dc.identifier.wosnumber | WOS:A1980KA66600056 | - |
| dc.citation.woscount | 50 | - |
| Appears in Collections: | Articles | |
- INTERFACIAL LAYER-THERMIONIC-DIFFUSION THEORY FOR THE SCHOTTKY-BARRIER DIODE / WU, CY
- A CHARACTERIZATION TECHNIQUE FOR THE DEGRADATION CHARACTERISTICS OF TI/SI SCHOTTKY-BARRIER DIODES AND OHMIC CONTACTS AFTER THERMAL SILICIDATION / LOU, YS;WU, CY
- A SIMPLE INTERFACIAL-LAYER MODEL FOR THE NONIDEAL IV AND C-V CHARACTERISTICS OF THE SCHOTTKY-BARRIER DIODE / TSENG, HH;WU, CY
- A SELF-CONSISTENT CHARACTERIZATION METHODOLOGY FOR SCHOTTKY-BARRIER DIODES AND OHMIC CONTACTS / LOU, YS;WU, CY
- Strong Fermi-level pinning induced by argon inductively coupled plasma treatment and post-metal deposition annealing on 4H-SiC / Tsui, Bing-Yue;Cheng, Jung-Chien;Yen, Cheng-Tyng;Lee, Chawn-Ying
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