BARRIER HEIGHT REDUCTION OF THE SCHOTTKY-BARRIER DIODE USING A THIN HIGHLY DOPED SURFACE-LAYER

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	WU, CY	en_US
dc.date.accessioned	2014-12-08T15:06:28Z	-
dc.date.available	2014-12-08T15:06:28Z	-
dc.date.issued	1980	en_US
dc.identifier.issn	0021-8979	en_US
dc.identifier.uri	http://hdl.handle.net/11536/5041	-
dc.identifier.uri	http://dx.doi.org/10.1063/1.328365	en_US
dc.language.iso	en_US	en_US
dc.title	BARRIER HEIGHT REDUCTION OF THE SCHOTTKY-BARRIER DIODE USING A THIN HIGHLY DOPED SURFACE-LAYER	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.328365	en_US
dc.identifier.journal	JOURNAL OF APPLIED PHYSICS	en_US
dc.citation.volume	51	en_US
dc.citation.issue	9	en_US
dc.citation.spage	4919	en_US
dc.citation.epage	4922	en_US
dc.contributor.department	電控工程研究所	zh_TW
dc.contributor.department	奈米中心	zh_TW
dc.contributor.department	Institute of Electrical and Control Engineering	en_US
dc.contributor.department	Nano Facility Center	en_US
dc.identifier.wosnumber	WOS:A1980KH98600058	-
dc.citation.woscount	18	-
顯示於類別：	期刊論文