CURRENT GAIN OF HIGH-LOW JUNCTION EMITTER BIPOLAR-TRANSISTOR STRUCTURE WITH UNIFORMLY DOPED PROFILES

標題:	CURRENT GAIN OF HIGH-LOW JUNCTION EMITTER BIPOLAR-TRANSISTOR STRUCTURE WITH UNIFORMLY DOPED PROFILES
作者:	WU, CY 電控工程研究所奈米中心 Institute of Electrical and Control Engineering Nano Facility Center
公開日期:	1980
URI:	http://hdl.handle.net/11536/5052
ISSN:	0038-1101
期刊:	SOLID-STATE ELECTRONICS
Volume:	23
Issue:	12
起始頁:	1215
結束頁:	1221
Appears in Collections:	Articles