CURRENT GAIN OF HIGH-LOW JUNCTION EMITTER BIPOLAR-TRANSISTOR STRUCTURE WITH UNIFORMLY DOPED PROFILES

Full metadata record

DC Field	Value	Language
dc.contributor.author	WU, CY	en_US
dc.date.accessioned	2014-12-08T15:06:29Z	-
dc.date.available	2014-12-08T15:06:29Z	-
dc.date.issued	1980	en_US
dc.identifier.issn	0038-1101	en_US
dc.identifier.uri	http://hdl.handle.net/11536/5052	-
dc.language.iso	en_US	en_US
dc.title	CURRENT GAIN OF HIGH-LOW JUNCTION EMITTER BIPOLAR-TRANSISTOR STRUCTURE WITH UNIFORMLY DOPED PROFILES	en_US
dc.type	Article	en_US
dc.identifier.journal	SOLID-STATE ELECTRONICS	en_US
dc.citation.volume	23	en_US
dc.citation.issue	12	en_US
dc.citation.spage	1215	en_US
dc.citation.epage	1221	en_US
dc.contributor.department	電控工程研究所	zh_TW
dc.contributor.department	奈米中心	zh_TW
dc.contributor.department	Institute of Electrical and Control Engineering	en_US
dc.contributor.department	Nano Facility Center	en_US
dc.identifier.wosnumber	WOS:A1980KR02100005	-
dc.citation.woscount	6	-
Appears in Collections:	Articles