低消耗功率之 8GHz 壓控震盪器

Abstract

本論文主要以TSMC 0.18um RF CMOS 1P6M製程設計可應用於高頻鎖相迴路且低功率之8GHz壓控振盪器。文章中提及巴克豪森振盪原理、負電阻振盪原理與相位雜訊之定義，並分析此振盪器架構之優缺點。 電路佈局走線部分，是將RF訊號佈局走線於第六層金屬，控制元件走線佈局第四層金屬，電源走線則是佈局於第二層金屬，整體面積為0.811x0.752 mm2。 實作方面，振盪中心頻率為8.090 GHz，可調頻率範圍為80 MHz，偏移主頻 之相位雜訊 為 -116.8 dBc/Hz，消耗電流為3.36mA，消耗功率為4.03mW，整體優化指數(FOM)為-188.9 dBc/Hz。

This paper presents using for Phase Locked Loop with high frequency and low consumptive current VCO of 8GHz by TSMC 0.18um RF CMOS 1P6M process technology. The article mentioned the Barkhausen criterion、negative resistance criterion and the definition of phase noise. We also describe the advantage and disadvantage for the structure of the oscillator. About the arrangement of layout, the RF signal was arranged in Metal6 layer. The device controller was arranged in Metal4 layer. Power line was lying down in Metal2 layer. The die area is 0.811x0.752 mm2. The measured in center frequency was 8.090 GHz、Tuning range was 80MHz. Phase noise that shift 1MHz from center frequency is -116.8 dBc/Hz. The consumptive current was measured 3.36mA and consumptive power is 4.03mW. FOM is -188.9 dBc/Hz.