標題: Layout dependence on threshold voltage instability of hydrogenated amorphous silicon thin film transistors
作者: Tseng, Huai-Yuan
Chiang, Ko-Yu
Lu, Hau-Yan
Kung, Chen-Pang
Chang, Ting-Chang
光電工程學系
Department of Photonics
關鍵字: amorphous silicon thin film transistors;threshold voltage shift;layout;circular
公開日期: 1-三月-2007
摘要: In this paper, we discuss the threshold voltage instability of two distinct layouts of hydrogenated amorphous silicon thin film transistors (a-Si:H TFTs). By simultaneously applying gate and drain bias stress, we show that the average threshold voltage shift of circular a-Si:H TFTs is 54% less than that of conventional inverted staggered a-Si:H TFTs. This result is primarily due to that the circular layout reduces the channel electron concentration. ISE-DESSIS (Integrated System Engineering DEvice Simulation for Smart Integrated Systems) was used to simulate the parallel electric field and obtain the total channel electron concentration. The simulation results closely correspond to the explanation in this study. These results indicate a significant impact of improving threshold voltage stability by a layout method.
URI: http://dx.doi.org/10.1143/JJAP.46.1318
http://hdl.handle.net/11536/5090
ISSN: 0021-4922
DOI: 10.1143/JJAP.46.1318
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Volume: 46
Issue: 3B
起始頁: 1318
結束頁: 1321
顯示於類別:會議論文


文件中的檔案:

  1. 000247049900017.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。