標題: | Layout dependence on threshold voltage instability of hydrogenated amorphous silicon thin film transistors |
作者: | Tseng, Huai-Yuan Chiang, Ko-Yu Lu, Hau-Yan Kung, Chen-Pang Chang, Ting-Chang 光電工程學系 Department of Photonics |
關鍵字: | amorphous silicon thin film transistors;threshold voltage shift;layout;circular |
公開日期: | 1-三月-2007 |
摘要: | In this paper, we discuss the threshold voltage instability of two distinct layouts of hydrogenated amorphous silicon thin film transistors (a-Si:H TFTs). By simultaneously applying gate and drain bias stress, we show that the average threshold voltage shift of circular a-Si:H TFTs is 54% less than that of conventional inverted staggered a-Si:H TFTs. This result is primarily due to that the circular layout reduces the channel electron concentration. ISE-DESSIS (Integrated System Engineering DEvice Simulation for Smart Integrated Systems) was used to simulate the parallel electric field and obtain the total channel electron concentration. The simulation results closely correspond to the explanation in this study. These results indicate a significant impact of improving threshold voltage stability by a layout method. |
URI: | http://dx.doi.org/10.1143/JJAP.46.1318 http://hdl.handle.net/11536/5090 |
ISSN: | 0021-4922 |
DOI: | 10.1143/JJAP.46.1318 |
期刊: | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS |
Volume: | 46 |
Issue: | 3B |
起始頁: | 1318 |
結束頁: | 1321 |
顯示於類別: | 會議論文 |