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dc.contributor.authorWU, CCen_US
dc.contributor.authorCHEN, Aen_US
dc.date.accessioned2014-12-08T15:06:32Z-
dc.date.available2014-12-08T15:06:32Z-
dc.date.issued1979en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/11536/5100-
dc.identifier.urihttp://dx.doi.org/10.1063/1.90780en_US
dc.language.isoen_USen_US
dc.titleTRANSVERSE MAGNETORESISTANCE OF HIGHLY DOPED N-TYPE INSB IN STRONG MAGNETIC-FIELDSen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.90780en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume34en_US
dc.citation.issue5en_US
dc.citation.spage340en_US
dc.citation.epage342en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department應用數學系zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Applied Mathematicsen_US
dc.identifier.wosnumberWOS:A1979GM86200014-
dc.citation.woscount2-
顯示於類別:期刊論文