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dc.contributor.author褚冀良en_US
dc.contributor.authorChu, Ji-Liangen_US
dc.contributor.author施敏en_US
dc.contributor.authorShi, Minen_US
dc.date.accessioned2014-12-12T02:01:09Z-
dc.date.available2014-12-12T02:01:09Z-
dc.date.issued1972en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#NT614430001en_US
dc.identifier.urihttp://hdl.handle.net/11536/51030-
dc.description.abstractBARITT stands for Barrier Injection and Transit Time. The BARITT diode is a new class of microwave solid state devices. In this thesis the static and microwave performances of various BARITT structures have been studied theoretically and experimentally. The BARITT diode family includes two types, the Schottky-type structures and the pn junction-type structrues. For the Schottky-type static current-voltage characteristics and small-signal impedance in order to optimize for higher operation efficiency and power output. The four diode structures are mνnp, Mup. MνnνM and MnνM, where M stands for metal and ν for low-doping n type semiconductor. for the pn junction-type BARITT diodes, the current transport mechanisms and the small-signal impedance of reach-through p+np+ and its related structures have also been studied.zh_TW
dc.language.isozh_TWen_US
dc.subject靜態zh_TW
dc.subject微波特性zh_TW
dc.subject電子工程zh_TW
dc.subjectBARITTen_US
dc.subjectBARRIER-INJECTION-ANDTRANSIT-Ten_US
dc.subjectPN-JUNCTION-TYPE-STRUCTUREen_US
dc.subjectSTATIC-CURRENT-VOLTAGEen_US
dc.subjectCURRENT-TRANSPORT-MECHANISMen_US
dc.subjectELECTRONIC-ENGINEERINGen_US
dc.titleBARITT結構的靜態與微波特性zh_TW
dc.typeThesisen_US
dc.contributor.department電子研究所zh_TW
Appears in Collections:Thesis