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DC FieldValueLanguage
dc.contributor.authorWU, CYen_US
dc.contributor.authorLAI, KNen_US
dc.date.accessioned2014-12-08T15:06:32Z-
dc.date.available2014-12-08T15:06:32Z-
dc.date.issued1979en_US
dc.identifier.issn0038-1101en_US
dc.identifier.urihttp://hdl.handle.net/11536/5105-
dc.language.isoen_USen_US
dc.titleNEW INTEGRATED VOLTAGE-CONTROLLED NEGATIVE-RESISTANCE DEVICE LAMBDA MOSFETen_US
dc.typeArticleen_US
dc.identifier.journalSOLID-STATE ELECTRONICSen_US
dc.citation.volume22en_US
dc.citation.issue9en_US
dc.citation.spage779en_US
dc.citation.epage781en_US
dc.contributor.department工學院zh_TW
dc.contributor.department奈米中心zh_TW
dc.contributor.departmentCollege of Engineeringen_US
dc.contributor.departmentNano Facility Centeren_US
dc.identifier.wosnumberWOS:A1979HQ67600006-
dc.citation.woscount4-
Appears in Collections:Articles


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