| 標題: | SCHOTTKY PHOTO-TRANSISTOR |
| 作者: | LEE, CL FEUCHT, DL 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
| 公開日期: | 1978 |
| URI: | http://hdl.handle.net/11536/5115 |
| ISSN: | 0038-1101 |
| 期刊: | SOLID-STATE ELECTRONICS |
| Volume: | 21 |
| Issue: | 7 |
| 起始頁: | 989 |
| 結束頁: | 991 |
| Appears in Collections: | Articles |
- Schottky barrier height for the photo leakage current transformation of a-Si : H TFTs / Wang, M. C.;Chang, T. C.;Liu, Po-Tsun;Li, Y. Y.;Xiao, R. W.
- Identical Off-state Current Raise Induced by Photo-induced Schottky Barrier Lowering in a-InGaZnO4 Thin Film Transistors / Chen, Hua-Mao;Chang, Ting-Chang;Liao, Po-Yung;Chiang, Hsiao-Cheng;Chen, Ching-En
- Influence of InGaP and AlGaAs Schottky Layers on ESD Robustness in GaAs pHEMTs / Chen, Shih-Hung;Lin, Yueh-Chin;Linten, Dimitri;Scholz, Mirko;Hellings, Geert
- Fabrication and characterization of Schottky barrier polysilicon thin-film transistors with excimer-laser crystallized channel / Yeh, KL;Lin, HC;Tsai, RW;Lee, MH;Huang, TY
- 高溫適用之氮化鎢T型閘極氮化鋁鎵/氮化鎵高速電晶體之製程開發與材料分析 / 方照詒;Chao-Yi Fang;張翼;馮明憲;Edward Yi Chang
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