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dc.contributor.authorLin, Meng-Hanen_US
dc.contributor.authorWu, Ming-Chien_US
dc.contributor.authorHuang, Chun-Yangen_US
dc.contributor.authorLin, Chen-Hsien_US
dc.contributor.authorTseng, Tseung-Yuenen_US
dc.date.accessioned2014-12-08T15:06:33Z-
dc.date.available2014-12-08T15:06:33Z-
dc.date.issued2010-07-28en_US
dc.identifier.issn0022-3727en_US
dc.identifier.urihttp://dx.doi.org/10.1088/0022-3727/43/29/295404en_US
dc.identifier.urihttp://hdl.handle.net/11536/5127-
dc.description.abstractThe fabrication of SrZrO(3) (SZO) memory devices with oxygen-rich (OR) and oxygen-deficient (OD) double layers, their resistive switching (RS) characteristics and mechanisms are investigated in this study. Due to the difference in oxygen content between the OR and OD layers formed by an oxygen flow control (OFC) process during SZO deposition, the RS region is effectively reduced and localized within the OR layer, which leads to a low operation voltage and stable RS behaviours. Furthermore, the OFC SZO device exhibits high-speed switching (10 ns) over 400 times and long retention (>10(6) s), showing promising potential for next-generation nonvolatile memory applications.en_US
dc.language.isoen_USen_US
dc.titleHigh-speed and localized resistive switching characteristics of double-layer SrZrO(3) memory devicesen_US
dc.typeArticleen_US
dc.identifier.doi10.1088/0022-3727/43/29/295404en_US
dc.identifier.journalJOURNAL OF PHYSICS D-APPLIED PHYSICSen_US
dc.citation.volume43en_US
dc.citation.issue29en_US
dc.citation.spageen_US
dc.citation.epageen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
Appears in Collections:Articles