Oxygen vacancy estimation of high k metal gate using thermal dynamic model

doi:10.1063/1.3473772

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chang, H. L.	en_US
dc.contributor.author	Liang, M. S.	en_US
dc.date.accessioned	2014-12-08T15:06:33Z	-
dc.date.available	2014-12-08T15:06:33Z	-
dc.date.issued	2010-07-26	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.3473772	en_US
dc.identifier.uri	http://hdl.handle.net/11536/5128	-
dc.description.abstract	Oxygen vacancies are electronic defects in materials. In a metal oxide system, the distribution of such vacancies is determined by the oxygen affinity. This study predicts the oxygen vacancy concentration in a high-k/metal gate system using a developed thermal dynamic model. A system with Ti:N=2 has a 200 mV lower flat band voltage than an N rich metal. The Gibbs free energy of formation of oxygen vacancies, similar to 0.5 eV, is derived from flab band voltage shifts and created neutral oxygen vacancy. The oxygen vacancy model based on estimating thermal dynamics is proposed. (C) 2010 American Institute of Physics. [doi:10.1063/1.3473772]	en_US
dc.language.iso	en_US	en_US
dc.subject	free energy	en_US
dc.subject	hafnium compounds	en_US
dc.subject	MOS capacitors	en_US
dc.subject	silicon	en_US
dc.subject	silicon compounds	en_US
dc.subject	titanium compounds	en_US
dc.subject	vacancies (crystal)	en_US
dc.title	Oxygen vacancy estimation of high k metal gate using thermal dynamic model	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.3473772	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.citation.volume	97	en_US
dc.citation.issue	4	en_US
dc.citation.epage		en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000281059200032	-
dc.citation.woscount	4	-
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