A Raman study of ZnSe at high pressure

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chou, WC	en_US
dc.contributor.author	Lin, CM	en_US
dc.contributor.author	Ro, RS	en_US
dc.contributor.author	Ho, CS	en_US
dc.contributor.author	Hong, DY	en_US
dc.contributor.author	Yang, CS	en_US
dc.contributor.author	Chuu, DS	en_US
dc.contributor.author	Yang, TJ	en_US
dc.contributor.author	Xu, J	en_US
dc.contributor.author	Huang, E	en_US
dc.date.accessioned	2014-12-08T15:01:44Z	-
dc.date.available	2014-12-08T15:01:44Z	-
dc.date.issued	1997-06-01	en_US
dc.identifier.issn	0577-9073	en_US
dc.identifier.uri	http://hdl.handle.net/11536/512	-
dc.description.abstract	The ZnSe was studied by Raman scattering spectroscopy at pressures up to 36 GPa at first time. The present researchers have found splittings of transverse optical (TO) phonon at 4.65 and 7.61 GPa. In addition, the Raman signals of the longitudinal optical (LO) phonon disappeared at 14.35 GPa. The disappearance of the LO phonon is attributed to the semiconductor-metal phase transition. However, the TO phonon peaks were still visible above the metallization pressure.	en_US
dc.language.iso	en_US	en_US
dc.title	A Raman study of ZnSe at high pressure	en_US
dc.type	Article	en_US
dc.identifier.journal	CHINESE JOURNAL OF PHYSICS	en_US
dc.citation.volume	35	en_US
dc.citation.issue	3	en_US
dc.citation.spage	266	en_US
dc.citation.epage	273	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
顯示於類別：	期刊論文