標題: Site-controlled self-assembled InAs quantum dots grown on GaAs substrates
作者: Lin, Shih-Yen
Tseng, Chi-Che
Chung, Tung-Hsun
Liao, Wen-Hsuan
Chen, Shu-Han
Chyi, Jen-Inn
光電工程學系
Department of Photonics
公開日期: 23-七月-2010
摘要: Atomically-flat surfaces are obtained after thin GaAsSb buffer layer growth on GaAs substrates with regular-distributed nano-holes formed after oxide desorption of the local atomic-force-microscopy anode oxidation. Different from the samples with GaAsSb buffer layers, increasing surface root-mean-square roughness is observed for the GaAs-buffered samples with increasing GaAs buffer layer thickness. The phenomenon is attributed to the enhanced adatom migration resulting from the incorporation of Sb atoms. By using the substrates with nano-holes after buffer layer growth, site-controlled self-assembled InAs quantum dots (QDs) are observed with the deposition of a below-critical-thickness InAs coverage of 1.3 monolayer (ML).
URI: http://dx.doi.org/10.1088/0957-4484/21/29/295304
http://hdl.handle.net/11536/5133
ISSN: 0957-4484
DOI: 10.1088/0957-4484/21/29/295304
期刊: NANOTECHNOLOGY
Volume: 21
Issue: 29
結束頁: 
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