標題: | Site-controlled self-assembled InAs quantum dots grown on GaAs substrates |
作者: | Lin, Shih-Yen Tseng, Chi-Che Chung, Tung-Hsun Liao, Wen-Hsuan Chen, Shu-Han Chyi, Jen-Inn 光電工程學系 Department of Photonics |
公開日期: | 23-七月-2010 |
摘要: | Atomically-flat surfaces are obtained after thin GaAsSb buffer layer growth on GaAs substrates with regular-distributed nano-holes formed after oxide desorption of the local atomic-force-microscopy anode oxidation. Different from the samples with GaAsSb buffer layers, increasing surface root-mean-square roughness is observed for the GaAs-buffered samples with increasing GaAs buffer layer thickness. The phenomenon is attributed to the enhanced adatom migration resulting from the incorporation of Sb atoms. By using the substrates with nano-holes after buffer layer growth, site-controlled self-assembled InAs quantum dots (QDs) are observed with the deposition of a below-critical-thickness InAs coverage of 1.3 monolayer (ML). |
URI: | http://dx.doi.org/10.1088/0957-4484/21/29/295304 http://hdl.handle.net/11536/5133 |
ISSN: | 0957-4484 |
DOI: | 10.1088/0957-4484/21/29/295304 |
期刊: | NANOTECHNOLOGY |
Volume: | 21 |
Issue: | 29 |
結束頁: | |
顯示於類別: | 期刊論文 |