標題: Discussion on electrical characteristics of i-In(0.13)Ga(0.87)N p-i-n photovoltaics by using a single/multi-antireflection layer
作者: Lee, Han Cheng
Su, Yan Kuin
Chuang, Wen Kuei
Lin, Jia Ching
Huang, Kuo Chin
Cheng, Yi Cheng
Chang, Kuo Jen
電子物理學系
Department of Electrophysics
公開日期: 1-七月-2010
摘要: Active layers of i-In(0.13)Ga(0.87)N p-i-n photovoltaics (PVs) with a single antireflection layer (SARL) and a multi-antireflection layer (MARL), respectively, were fabricated. Reflectance simulation results show that the PVs with a SARL or a MARL have performance superior to those without an antireflection layer (ARL). In particular, the surface reflectance of PVs with a MARL was reduced to 6% at wavelengths between 330 and 500 nm. The ARL reduced the reflectance and recombination current, as well as boosting shunt resistance without increasing series resistance. Compared with PVs without an ARL, the open-circuit voltage and fill factor of PVs with a MARL increased by 100% and 54.5%, respectively. The ideal factor was improved by 19.4% and 31.9% in devices with a SARL (SiO(2)) and a MARL (Ta(2)O(5)/SiO(2)), respectively. (C) 2010 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.solmat.2010.03.020
http://hdl.handle.net/11536/5152
ISSN: 0927-0248
DOI: 10.1016/j.solmat.2010.03.020
期刊: SOLAR ENERGY MATERIALS AND SOLAR CELLS
Volume: 94
Issue: 7
起始頁: 1259
結束頁: 1262
顯示於類別:期刊論文