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dc.contributor.authorPan, Tung-Mingen_US
dc.contributor.authorLi, Zhi-Hongen_US
dc.contributor.authorDeng, Chih-Kangen_US
dc.date.accessioned2014-12-08T15:06:36Z-
dc.date.available2014-12-08T15:06:36Z-
dc.date.issued2010-07-01en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TED.2010.2047904en_US
dc.identifier.urihttp://hdl.handle.net/11536/5171-
dc.description.abstractIn this paper, we developed high-k Tb(2)O(3) poly-Si thin-film transistors (TFTs) using different CF(4) plasma power treatments. The high-k Tb(2)O(3) poly-Si TFT device with a 20-W plasma power exhibited better electrical characteristics in terms of a highly effective carrier mobility, a high-driving current, a low-threshold voltage, a small subthreshold slope, and a high I(ON)/I(OFF) current ratio. This result is attributed to the incorporation of fluorine atoms into the Tb(2)O(3)/poly-Si interface to reduce the trap-state density. The high-k Tb(2)O(3) poly-Si TFT prepared under a 20-W CF(4) plasma power also enhanced electrical reliabilities, including hot carrier and positive bias temperature instability. All of these results suggest that the CF(4) plasma-treated poly-Si Tb(2)O(3) TFT is a good candidate for high-performance low-temperature poly-Si TFTs.en_US
dc.language.isoen_USen_US
dc.titleEffects of CF(4) Plasma Treatment on the Electrical Characteristics of Poly-Silicon TFTs Using a Tb(2)O(3) Gate Dielectricen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TED.2010.2047904en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume57en_US
dc.citation.issue7en_US
dc.citation.spage1519en_US
dc.citation.epage1526en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
Appears in Collections:Articles