标题: | Effects of CF(4) Plasma Treatment on the Electrical Characteristics of Poly-Silicon TFTs Using a Tb(2)O(3) Gate Dielectric |
作者: | Pan, Tung-Ming Li, Zhi-Hong Deng, Chih-Kang 电子工程学系及电子研究所 Department of Electronics Engineering and Institute of Electronics |
公开日期: | 1-七月-2010 |
摘要: | In this paper, we developed high-k Tb(2)O(3) poly-Si thin-film transistors (TFTs) using different CF(4) plasma power treatments. The high-k Tb(2)O(3) poly-Si TFT device with a 20-W plasma power exhibited better electrical characteristics in terms of a highly effective carrier mobility, a high-driving current, a low-threshold voltage, a small subthreshold slope, and a high I(ON)/I(OFF) current ratio. This result is attributed to the incorporation of fluorine atoms into the Tb(2)O(3)/poly-Si interface to reduce the trap-state density. The high-k Tb(2)O(3) poly-Si TFT prepared under a 20-W CF(4) plasma power also enhanced electrical reliabilities, including hot carrier and positive bias temperature instability. All of these results suggest that the CF(4) plasma-treated poly-Si Tb(2)O(3) TFT is a good candidate for high-performance low-temperature poly-Si TFTs. |
URI: | http://dx.doi.org/10.1109/TED.2010.2047904 http://hdl.handle.net/11536/5171 |
ISSN: | 0018-9383 |
DOI: | 10.1109/TED.2010.2047904 |
期刊: | IEEE TRANSACTIONS ON ELECTRON DEVICES |
Volume: | 57 |
Issue: | 7 |
起始页: | 1519 |
结束页: | 1526 |
显示于类别: | Articles |