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dc.contributor.authorKuo, Chien-Ien_US
dc.contributor.authorHsu, Heng-Tungen_US
dc.contributor.authorChen, Yu-Linen_US
dc.contributor.authorWu, Chien-Yingen_US
dc.contributor.authorChang, Edward Yien_US
dc.contributor.authorMiyamoto, Yasuyukien_US
dc.contributor.authorTsern, Wen-Chungen_US
dc.contributor.authorSahoo, Kartik Chandraen_US
dc.date.accessioned2014-12-08T15:06:39Z-
dc.date.available2014-12-08T15:06:39Z-
dc.date.issued2010-07-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2010.2048995en_US
dc.identifier.urihttp://hdl.handle.net/11536/5198-
dc.description.abstractHigh-performance metamorphic high-electron mobility transistors (MHEMTs) using an (In(x)Ga(1-x)As)(m)/(InAs)(n) superlattice structure as a channel layer have been fabricated successfully. These HEMTs with 80-nm gate length exhibited a high drain current density of 392 mA/mm and a transconductance of 991 mS/mm at 1.2-V drain bias. Compared with a regular In(x)Ga(1-x)As channel, the superlattice-channel HEMTs showed an outstanding performance due to the high electron mobility and better carrier confinement in the (In(x)Ga(1-x)As)(m)/(InAs)(n) channel layer. When biased at 1.2 V, the current gain cutoff frequency (f(T)) and the maximum oscillation frequency (f(max)) were extracted to be 304 and 162 GHz, respectively. As for noise performance, the device demonstrated a 0.75-dB minimum noise figure(NF(min)) with an associated gain of 9.6 dB at 16 GHz. Such superior performance has made the devices with a superlattice channel well suitable for millimeter-wave applications.en_US
dc.language.isoen_USen_US
dc.titleRF Performance Improvement of Metamorphic High-Electron Mobility Transistor Using (In(x)Ga(1-x)As)(m)/(InAs)(n) Superlattice-Channel Structure for Millimeter-Wave Applicationsen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2010.2048995en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume31en_US
dc.citation.issue7en_US
dc.citation.spage677en_US
dc.citation.epage679en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
Appears in Collections:Articles